22FDX® Technologies for Ultra-Low Power IoT, RF and mmWave Applications

In this work we revisited the 22nm FDSOI technology for lowest power IoT, RF and mmWave applications. Ultra-low leakage and power devices are described, as part of the 22FDX® portfolio. Transistors performance is presented. N-FET (p-FET) drive current of 910μA/μm (856μA/μm) at 0.8V and 100pA/μm Ioff are reported fulfilling the requirements for ultra-low power and leakage design space. Excellent low noise is shown due to the suppressed RDF coming from the un-doped silicon channel. Superior fT and fmax have been measured on CMOS and LDMOS devices. 347GHz n-FET fT and 371GHz fmax were achieved on thin oxide CMOS devices. Simple PA circuit results are reported to highlight the benefit of 22FDX® technology for RF and mmWave applications. In conclusion, an outlook of the scalability as well as novel process integrations are discussed.

In this work we revisited the 22nm FDSOI technology for lowest power IoT, RF and mmWave applications. Ultra-low leakage and power devices are described, as part of the 22FDX® portfolio. Transistors performance is presented. N-FET (p-FET) drive current of 910μA/μm (856μA/μm) at 0.8V and 100pA/μm Ioff are reported fulfilling the requirements for ultra-low power and leakage design space. Excellent low noise is shown due to the suppressed RDF coming from the un-doped silicon channel. Superior fT and fmax have been measured on CMOS and LDMOS devices. 347GHz n-FET fT and 371GHz fmax were achieved on thin oxide CMOS devices. Simple PA circuit results are reported to highlight the benefit of 22FDX® technology for RF and mmWave applications. In conclusion, an outlook of the scalability as well as novel process integrations are discussed.

CMOS FDSOI analog mixed-signal RF mmWave ultra-low power ultra-low leakage RTS LFN

CMOS FDSOI analog mixed-signal RF mmWave ultra-low power ultra-low leakage RTS LFN