Electrical characterization of advanced FDSOI CMOS devices

FDSOI technologies are very promising candidates for future CMOS circuits as they feature low variability, improved short channel effect and good transport characteristics. In this paper, we review the main electrical techniques and methodologies used to characterize the important MOS device parameters. First, the capacitance-voltage measurements are considered for the vertical stack characterization of FDSOI structures with HK/MG gate, ultra thin film channel, thin box oxide and back plane substrate. Then, the MOSFET parameter extraction methods are illustrated, as well as the transport and mobility assessment using various techniques (I-V, magneto-transport). Finally, the methodology to study the local variability of the electrical characteristics is also discussed.

FDSOI technologies are very promising candidates for future CMOS circuits as they feature low variability, improved short channel effect and good transport characteristics. In this paper, we review the main electrical techniques and methodologies used to characterize the important MOS device parameters. First, the capacitance-voltage measurements are considered for the vertical stack characterization of FDSOI structures with HK/MG gate, ultra thin film channel, thin box oxide and back plane substrate. Then, the MOSFET parameter extraction methods are illustrated, as well as the transport and mobility assessment using various techniques (I-V, magneto-transport). Finally, the methodology to study the local variability of the electrical characteristics is also discussed.

FDSOI MOSFET parameter extraction electrical characterization capacitance mobility local variability

FDSOI MOSFET parameter extraction electrical characterization capacitance mobility local variability