TY  - Type of reference 
TI  - Technologies 22FDX® pour les Applications très basse puissance IoT, RF et Ondes Millimétriques 
AU  - Jan Hoentschel 
AU  - Luca Pirro 
AU  - Rick Carter 
AU  - Manfred Horstmann 
AB  - In this work we revisited the 22nm FDSOI technology for lowest power IoT, RF and mmWave applications. Ultra-low leakage and power devices are described, as part of the 22FDX® portfolio. Transistors performance is presented. N-FET (p-FET) drive current of 910μA/μm (856μA/μm) at 0.8V and 100pA/μm Ioff are reported fulfilling the requirements for ultra-low power and leakage design space. Excellent low noise is shown due to the suppressed RDF coming from the un-doped silicon channel. Superior fT and fmax have been measured on CMOS and LDMOS devices. 347GHz n-FET fT and 371GHz fmax were achieved on thin oxide CMOS devices. Simple PA circuit results are reported to highlight the benefit of 22FDX® technology for RF and mmWave applications. In conclusion, an outlook of the scalability as well as novel process integrations are discussed. 
DO  - 10.21494/ISTE.OP.2019.0321 
JF  - Composants nanoélectroniques 
KW  - CMOS,  FDSOI,  analog,  mixed-signal,  RF,  mmWave,  ultra-low power,  ultra-low leakage,  RTS,  LFN, CMOS,  FDSOI,  analog,  mixed-signal,  RF,  mmWave,  ultra-low power,  ultra-low leakage,  RTS,  LFN,  
L1  - https://openscience.fr/IMG/pdf/iste_componano19v2n1_2.pdf 
LA  - fr 
PB  - ISTE OpenScience 
DA  - 2019/01/29 
SN  - 2516-3914 
TT  - 22FDX® Technologies for Ultra-Low Power IoT, RF and mmWave Applications 
UR  - https://openscience.fr/Technologies-22FDX-R-pour-les-Applications-tres-basse-puissance-IoT-RF-et-Ondes 
IS  - FDSOI 
VL  - 2 
ER  -