@ARTICLE{10.21494/ISTE.OP.2021.0600, TITLE={Thermal behavior optimization of the high electron mobility transistor (HEMT) using the KA-CMA-ES method}, AUTHOR={Amar Abdelhamid, Radi Bouchaib, El Hami Abdelkhalak, }, JOURNAL={Uncertainties and Reliability of Multiphysical Systems}, VOLUME={4}, NUMBER={Issue 2}, YEAR={2021}, URL={https://openscience.fr/Thermal-behavior-optimization-of-the-high-electron-mobility-transistor-HEMT}, DOI={10.21494/ISTE.OP.2021.0600}, ISSN={2514-569X}, ABSTRACT={The main objective of Optimization is to ensure a robust system design with minimal cost, in this paper we focus on the optimization of the behavior of the High Electron Mobility Transistor (HEMT), it is a very important element in high power mechatronic systems. It is composed of several layers of materials, the geometrical and thermal parameters of these layers influence the thermal behavior and in particular the operating temperature of the transistor, hence its performance. The CMA-ES method assisted by kriging (KA_CMA_ES) coded on Matlab coupled with a finite element model developed on Comsol multiphysics, this coupling allowed to optimize the transistor structure in order to reduce its maximum operating temperature, so that the transistor performs its function with less influence on the other characteristics. A comparison between the KA-CMA-ES and CMA-ES methods was made. The KA-CMA-ES method showed an efficiency in terms of accuracy and computation time.}}