Titre : Technologies 22FDX® pour les Applications très basse puissance IoT, RF et Ondes Millimétriques 

Auteurs : Jan Hoentschel, Luca Pirro, Rick Carter, Manfred Horstmann,  

Revue : Composants nanoélectroniques 

Numéro : FDSOI 

Volume : 2 

Date : 2019/01/29 

DOI : 10.21494/ISTE.OP.2019.0321 

ISSN : 2516-3914 

Résumé : In this work we revisited the 22nm FDSOI technology for lowest power IoT, RF and mmWave applications. Ultra-low leakage and power devices are described, as part of the 22FDX® portfolio. Transistors performance is presented. N-FET (p-FET) drive current of 910μA/μm (856μA/μm) at 0.8V and 100pA/μm Ioff are reported fulfilling the requirements for ultra-low power and leakage design space. Excellent low noise is shown due to the suppressed RDF coming from the un-doped silicon channel. Superior fT and fmax have been measured on CMOS and LDMOS devices. 347GHz n-FET fT and 371GHz fmax were achieved on thin oxide CMOS devices. Simple PA circuit results are reported to highlight the benefit of 22FDX® technology for RF and mmWave applications. In conclusion, an outlook of the scalability as well as novel process integrations are discussed. 

Éditeur : ISTE OpenScience