@ARTICLE{10.21494/ISTE.OP.2019.0321, 

TITLE={Technologies 22FDX® pour les Applications très basse puissance IoT, RF et Ondes Millimétriques}, 
  
AUTHOR={Jan Hoentschel, Luca Pirro, Rick Carter, Manfred Horstmann, }, 
	
JOURNAL={Composants nanoélectroniques}, 
	
VOLUME={2}, 

NUMBER={FDSOI}, 
	
YEAR={2019}, 

URL={https://openscience.fr/Technologies-22FDX-R-pour-les-Applications-tres-basse-puissance-IoT-RF-et-Ondes}, 
	
DOI={10.21494/ISTE.OP.2019.0321}, 
	
ISSN={2516-3914}, 
	
ABSTRACT={In this work we revisited the 22nm FDSOI technology for lowest power IoT, RF and mmWave applications. Ultra-low leakage and power devices are described, as part of the 22FDX® portfolio. Transistors performance is presented. N-FET (p-FET) drive current of 910μA/μm (856μA/μm) at 0.8V and 100pA/μm Ioff are reported fulfilling the requirements for ultra-low power and leakage design space. Excellent low noise is shown due to the suppressed RDF coming from the un-doped silicon channel. Superior fT and fmax have been measured on CMOS and LDMOS devices. 347GHz n-FET fT and 371GHz fmax were achieved on thin oxide CMOS devices. Simple PA circuit results are reported to highlight the benefit of 22FDX® technology for RF and mmWave applications. In conclusion, an outlook of the scalability as well as novel process integrations are discussed.}}