Titre : Capturing Performance Limiting Effects in Tunnel-FETs 

Auteurs : Michael Graef, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes,  

Revue : Nanoelectronic Devices 

Numéro : Tunnel FETs 

Volume : 1 

Date : 2018/02/20 

DOI : 10.21494/ISTE.OP.2018.0220 

ISSN : 2516-3914 

Résumé : In this paper a two-dimensional analytical Tunnel-FET model is revised. It is used to evaluate performance enhancing measures for the TFET regarding device geometry and physical effects. The usage of hetero-junctions is discussed and a way to suppress the ambipolar behavior of the TFET is shown. In focus of this work are the emerging variability issues with this new type of device. Random-dopant-fluctuations (rdf) have a major influence on the device performance. This effect is analyzed and compared with rdf effects in a MOSFET device. The drawn conclusions lead to a
re-evaluation of performance limiting aspects of fabricated TFET devices. 

Éditeur : ISTE OpenScience