Titre : A semi-analytical and numerical model of thermal conduction of a transistor using the thermal quadrupoles method 

Auteurs : Ali El Arabi
, Nicolas Blet
, Benjamin Rémy
, Denis Maillet,  

Revue : Entropy: Thermodynamics – Energy – Environment – Economy  

Numéro : Special issue 

Volume : 4 

Date : 2023/10/19 

DOI : 10.21494/ISTE.OP.2023.1016 

ISSN : 2634-1476 

Résumé : A semi-analytical thermal model of a MOSFET in unsteady regime is presented. It allows the calculation of the temperature of the top surface of the device from the temperature on the bottom surface and the heat flux on the top surface. The thermal quadrupole method coupled to a spectrum conversion is used to manage the interfaces between the different layers of the device. For a two-dimensional geometry, the comparison of the results of the semi-analytical model with numerical results (under COMSOL Multiphysics) shows a maximum deviation lower than 0.1 K for a 45 K temperature variation and allows an inter-validation of the models. 

Éditeur : ISTE OpenScience