TY  - Type of reference 
TI  - A semi-analytical and numerical model of thermal conduction of a transistor using the thermal quadrupoles method 
AU  - Ali El Arabi
 
AU  - Nicolas Blet
 
AU  - Benjamin Rémy
 
AU  - Denis Maillet 
AB  - A semi-analytical thermal model of a MOSFET in unsteady regime is presented. It allows the calculation of the temperature of the top surface of the device from the temperature on the bottom surface and the heat flux on the top surface. The thermal quadrupole method coupled to a spectrum conversion is used to manage the interfaces between the different layers of the device. For a two-dimensional geometry, the comparison of the results of the semi-analytical model with numerical results (under COMSOL Multiphysics) shows a maximum deviation lower than 0.1 K for a 45 K temperature variation and allows an inter-validation of the models. 
DO  - 10.21494/ISTE.OP.2023.1016 
JF  - Entropy: Thermodynamics – Energy – Environment – Economy  
KW  - Heat conduction, Junction temperature, thermal quadrupoles, MOSFET, Conduction, température de jonction, quadripôles thermiques, MOSFET,  
L1  - http://openscience.fr/IMG/pdf/iste_entropie23v4n3_3.pdf 
LA  - en 
PB  - ISTE OpenScience 
DA  - 2023/10/19 
SN  - 2634-1476 
TT  - Modélisation semi-analytique et numérique de la conduction thermique au sein d’un transistor MOSFET 
UR  - http://openscience.fr/A-semi-analytical-and-numerical-model-of-thermal-conduction-of-a-transistor 
IS  - Special issue 
VL  - 4 
ER  -