TY  - Type of reference 
TI  - Electrical characterization of advanced FDSOI CMOS devices 
AU  - G. Ghibaudo 
AB  - FDSOI technologies are very promising candidates for future CMOS circuits as they feature low variability, improved short channel effect and good transport characteristics. In this paper, we review the main electrical techniques and methodologies used to characterize the important MOS device parameters. First, the capacitance-voltage measurements are considered for the vertical stack characterization of FDSOI structures with HK/MG gate, ultra thin film channel, thin box oxide and back plane substrate. Then, the MOSFET parameter extraction methods are illustrated, as well as the transport and mobility assessment using various techniques (I-V, magneto-transport). Finally, the methodology to study the local variability of the electrical characteristics is also discussed. 
DO  - 10.21494/ISTE.OP.2018.0304 
JF  - Nanoelectronic Devices 
KW  - FDSOI,  MOSFET,  parameter extraction,  electrical characterization,  capacitance,  mobility,  local variability, FDSOI,  MOSFET,  parameter extraction,  electrical characterization,  capacitance,  mobility,  local variability,  
L1  - http://openscience.fr/IMG/pdf/iste_componano19v2n1_1.pdf 
LA  - en 
PB  - ISTE OpenScience 
DA  - 2018/12/17 
SN  - 2516-3914 
TT  - Caractérisation électrique des Dispositifs CMOS FDSOI avancés 
UR  - http://openscience.fr/Electrical-characterization-of-advanced-FDSOI-CMOS-devices 
IS  - FDSOI 
VL  - 2 
ER  -