@ARTICLE{10.21494/ISTE.OP.2018.0220, 

TITLE={Effets limitant la performance des FET Tunnel}, 
  
AUTHOR={Michael Graef, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes, }, 
	
JOURNAL={Composants nanoélectroniques}, 
	
VOLUME={1}, 

NUMBER={Tunnel FETs}, 
	
YEAR={2018}, 

URL={http://openscience.fr/Effets-limitant-la-performance-des-FET-Tunnel}, 
	
DOI={10.21494/ISTE.OP.2018.0220}, 
	
ISSN={2516-3914}, 
	
ABSTRACT={In this paper a two-dimensional analytical Tunnel-FET model is revised. It is used to evaluate performance enhancing measures for the TFET regarding device geometry and physical effects. The usage of hetero-junctions is discussed and a way to suppress the ambipolar behavior of the TFET is shown. In focus of this work are the emerging variability issues with this new type of device. Random-dopant-fluctuations (rdf) have a major influence on the device performance. This effect is analyzed and compared with rdf effects in a MOSFET device. The drawn conclusions lead to a
re-evaluation of performance limiting aspects of fabricated TFET devices.}}